Laser cutting and welding solutions for the semiconductor industry
Dine Laser has developed a complete and directly implementable solution for laser cutting (wafer/hard and brittle materials) and laser welding (packaging/power modules) in the semiconductor industry, covering: process route + equipment selection + key parameters + yield/efficiency indicators + typical cases + risk control.
1. Semiconductor laser cutting solution (wafer / third-generation semiconductor)
(1) Core pain points
Silicon / Ultra-thin Silicon (20–50μm): Large chipping edges during mechanical cutting, prone to fracturing, and thermal damage
SiC/GaN (hard and brittle): chipping 5–15μm, low yield, high cost
Low-K / ultra-thin wafer: heat-sensitive, prone to interlayer cracking
(II) Material-specific Process Plan
1) Silicon wafer (6–12 inches, 20–200μm)
Recommended process: UV/Picosecond laser stealth dicing
Laser: 355nm UV / 532nm green picosecond, 10–50W
Core parameters:
Cutting track: 10–20μm (traditional blade 30–50μm)
Chipping: <1μm (traditional 5–15μm)
Heat-affected zone: <5μm
Yield: 99.5%–99.9%
Process: Material loading → Visual positioning → Invisible cutting (internal modification) → Splitting → Cleaning → Material unloading
Applicable to: ultra-thin wafers, WLP, power devices (MOSFET/IGBT)
2) SiC/GaN third-generation semiconductor (6–8 inches)
Recommended process: UV laser slotting + invisible cutting
Laser: 355nm ultraviolet, 20–100W; or femtosecond laser
Core parameters:
Chipping: ≤2μm (reduced by 80%)
Slot depth: 5–20μm, accuracy ±1μm
Yield: 99.0%–99.5%
Efficiency: ↑30%+
Application: Power devices for new energy vehicles, 5G RF chips
3) Low-K / Ultra-thin Wafer (<50μm)
Recommended process: picosecond ultraviolet laser cold ablation
Advantages: No thermal damage, no delamination, smooth edges
Kerf: 5–15μm, Ra<1μm
(III) Standard equipment configuration (mass production line)
Complete machine: Fully automatic wafer laser cutting machine (marble base + high-precision platform)
Motion positioning: ±0.5μm, repeatability ±0.1μm
Vision: Dual CCD + AI vision (automatic edge detection, alignment, and inspection)
Auxiliary: automatic loading and unloading, protective liquid coating, cleaning and drying
Representative models: Han's DA100, Huagong Dicing Agent, DISCO DFL7360
(IV) Typical Cases (Mass Production Data)
Case 1: Cutting of 8-inch ultra-thin silicon (35μm)
Process: 15W UV invisible cutting
Production capacity: 120 pieces/hour
Yield: 99.7% (traditional blade: 92%)
Edge chipping: <0.8μm
Case 2: 6-inch SiC slotting
Process: 50W UV laser
Slot width: 15μm, depth: 10μm
Yield: 99.2%
Efficiency: ↑40%
II. Semiconductor laser welding solutions (packaging/power modules)
(1) Core pain points
Fine pitch packaging (less than 0.25mm): traditional soldering is prone to bridge connection and poor soldering
Power module (IGBT/SiC): dissimilar materials of copper and aluminum, high heat dissipation requirements
Thermal sensor (MEMS/sensor): Highly susceptible to thermal effects and prone to failure
(II) Process schemes for different scenarios
1) Precision interconnection (Chiplet/2.5D/3D packaging)
Applications: Chip bump-substrate, solder ball bonding, ultra-fine leads
Recommended process: UV laser solder ball bonding / spot welding
Laser: 355nm UV, 10–50W; pulsed fiber laser
Core parameters:
Solder joint diameter: 50–100μm
Heat-affected zone: <0.2mm
Positioning accuracy: ±1μm
Yield: 99.7%–99.9%
Applicable to: AI chips, high-speed optical modules, MEMS
2) Power module soldering (IGBT/SiC)
Application: DBC copper clad laminate - copper PIN, copper-aluminum heat dissipation structure
Recommended process: Blue light / fiber laser welding (high copper absorption rate)
Laser: 450nm blue light (500–1500W) / 1064nm fiber
Core parameters:
Penetration depth: copper ≥ 5mm, aluminum ≥ 3mm
No splashes, no pores
Yield: ≥99.99%
Application: electric control of new energy vehicles, photovoltaic inverters
3) Sealing/Hermetic welding (sensors/optical components)
Application: Metal housing (Kovar / stainless steel), ceramic-metal packaging
Recommended process: Pulsed fiber laser seam welding
Core parameters:
Weld width: 0.3–0.8mm
Tightness: ≤1×10⁻⁹ Pa・m³/s
Yield: 99.5%+
(III) Standard equipment configuration (mass production line)
Complete machine: Precision laser welding machine (marble base + constant temperature control)
Motion positioning: ±1μm, high-speed galvanometer (scanning speed ≥2m/s)
Vision: 3D vision + real-time molten pool monitoring + AI closed-loop temperature control
Auxiliary: Nitrogen protection, automatic solder ball feeding, automatic loading and unloading
Representative model: DiNai semiconductor soldering station
(IV) Typical Cases (Mass Production Data)
Case 1: IGBT module PIN pin welding
Process: 300W fiber laser spot welding
Weld spot: φ0.5mm, penetration depth 0.8mm
Yield: 99.99%
Production capacity: 3000 units/hour
Case 2: Micro LED High-Volume Bonding
Process: Infrared laser linear spot
Positioning accuracy: ±1.5μm
Yield: 99.99%
Production capacity: 100,000 pieces/hour
III. Comparison of Overall Scheme Advantages (vs Traditional Process)
Laser cutting vs mechanical blade
Kerf: 10–20μm vs 30–50μm (material saving 3–5 times)
Edge chipping: <1μm vs 5–15μm
Thermal impact: <5μm vs mechanical stress + high temperature
Yield: 99.5%+ vs 85%-92%
Efficiency: ↑30%–100%
Laser welding vs soldering / brazing
Thermal impact: <0.2mm vs 2–5mm
Accuracy: ±1μm vs ±50μm
Dissimilar materials: copper / aluminum / ceramic weldable vs difficult
Yield: 99.7%+ vs 95%-98%
Automation: easy to integrate vs difficult
IV. Selection Suggestions (By Process)
Cutting selection
Ultra-thin silicon (<50μm): UV invisible cutting
SiC/GaN: UV femtosecond grooving + invisible cutting
Ordinary silicon (≥100μm): Green laser / Fiber laser cutting
Welding selection
Fine pitch packaging: UV laser solder ball bonding
Power module (copper): Blue laser welding
Airtight sealing cover: Pulsed fiber laser seam welding
V. Risk control and yield assurance
Environment: Constant temperature (±0.5℃), dust-free (Class 1000), shock-resistant
Process: AI parameter library + real-time monitoring + closed-loop feedback
Optics: Regularly calibrate the optical path, clean the lenses, and stabilize the power
Inspection: AI vision automatically inspects for chipping, cracks, and soldering defects
1. Semiconductor laser cutting solution (wafer / third-generation semiconductor)
(1) Core pain points
Silicon / Ultra-thin Silicon (20–50μm): Large chipping edges during mechanical cutting, prone to fracturing, and thermal damage
SiC/GaN (hard and brittle): chipping 5–15μm, low yield, high cost
Low-K / ultra-thin wafer: heat-sensitive, prone to interlayer cracking
(II) Material-specific Process Plan
1) Silicon wafer (6–12 inches, 20–200μm)
Recommended process: UV/Picosecond laser stealth dicing
Laser: 355nm UV / 532nm green picosecond, 10–50W
Core parameters:
Cutting track: 10–20μm (traditional blade 30–50μm)
Chipping: <1μm (traditional 5–15μm)
Heat-affected zone: <5μm
Yield: 99.5%–99.9%
Process: Material loading → Visual positioning → Invisible cutting (internal modification) → Splitting → Cleaning → Material unloading
Applicable to: ultra-thin wafers, WLP, power devices (MOSFET/IGBT)
2) SiC/GaN third-generation semiconductor (6–8 inches)
Recommended process: UV laser slotting + invisible cutting
Laser: 355nm ultraviolet, 20–100W; or femtosecond laser
Core parameters:
Chipping: ≤2μm (reduced by 80%)
Slot depth: 5–20μm, accuracy ±1μm
Yield: 99.0%–99.5%
Efficiency: ↑30%+
Application: Power devices for new energy vehicles, 5G RF chips
3) Low-K / Ultra-thin Wafer (<50μm)
Recommended process: picosecond ultraviolet laser cold ablation
Advantages: No thermal damage, no delamination, smooth edges
Kerf: 5–15μm, Ra<1μm
(III) Standard equipment configuration (mass production line)
Complete machine: Fully automatic wafer laser cutting machine (marble base + high-precision platform)
Motion positioning: ±0.5μm, repeatability ±0.1μm
Vision: Dual CCD + AI vision (automatic edge detection, alignment, and inspection)
Auxiliary: automatic loading and unloading, protective liquid coating, cleaning and drying
Representative models: Han's DA100, Huagong Dicing Agent, DISCO DFL7360
(IV) Typical Cases (Mass Production Data)
Case 1: Cutting of 8-inch ultra-thin silicon (35μm)
Process: 15W UV invisible cutting
Production capacity: 120 pieces/hour
Yield: 99.7% (traditional blade: 92%)
Edge chipping: <0.8μm
Case 2: 6-inch SiC slotting
Process: 50W UV laser
Slot width: 15μm, depth: 10μm
Yield: 99.2%
Efficiency: ↑40%
II. Semiconductor laser welding solutions (packaging/power modules)
(1) Core pain points
Fine pitch packaging (less than 0.25mm): traditional soldering is prone to bridge connection and poor soldering
Power module (IGBT/SiC): dissimilar materials of copper and aluminum, high heat dissipation requirements
Thermal sensor (MEMS/sensor): Highly susceptible to thermal effects and prone to failure
(II) Process schemes for different scenarios
1) Precision interconnection (Chiplet/2.5D/3D packaging)
Applications: Chip bump-substrate, solder ball bonding, ultra-fine leads
Recommended process: UV laser solder ball bonding / spot welding
Laser: 355nm UV, 10–50W; pulsed fiber laser
Core parameters:
Solder joint diameter: 50–100μm
Heat-affected zone: <0.2mm
Positioning accuracy: ±1μm
Yield: 99.7%–99.9%
Applicable to: AI chips, high-speed optical modules, MEMS
2) Power module soldering (IGBT/SiC)
Application: DBC copper clad laminate - copper PIN, copper-aluminum heat dissipation structure
Recommended process: Blue light / fiber laser welding (high copper absorption rate)
Laser: 450nm blue light (500–1500W) / 1064nm fiber
Core parameters:
Penetration depth: copper ≥ 5mm, aluminum ≥ 3mm
No splashes, no pores
Yield: ≥99.99%
Application: electric control of new energy vehicles, photovoltaic inverters
3) Sealing/Hermetic welding (sensors/optical components)
Application: Metal housing (Kovar / stainless steel), ceramic-metal packaging
Recommended process: Pulsed fiber laser seam welding
Core parameters:
Weld width: 0.3–0.8mm
Tightness: ≤1×10⁻⁹ Pa・m³/s
Yield: 99.5%+
(III) Standard equipment configuration (mass production line)
Complete machine: Precision laser welding machine (marble base + constant temperature control)
Motion positioning: ±1μm, high-speed galvanometer (scanning speed ≥2m/s)
Vision: 3D vision + real-time molten pool monitoring + AI closed-loop temperature control
Auxiliary: Nitrogen protection, automatic solder ball feeding, automatic loading and unloading
Representative model: DiNai semiconductor soldering station
(IV) Typical Cases (Mass Production Data)
Case 1: IGBT module PIN pin welding
Process: 300W fiber laser spot welding
Weld spot: φ0.5mm, penetration depth 0.8mm
Yield: 99.99%
Production capacity: 3000 units/hour
Case 2: Micro LED High-Volume Bonding
Process: Infrared laser linear spot
Positioning accuracy: ±1.5μm
Yield: 99.99%
Production capacity: 100,000 pieces/hour
III. Comparison of Overall Scheme Advantages (vs Traditional Process)
Laser cutting vs mechanical blade
Kerf: 10–20μm vs 30–50μm (material saving 3–5 times)
Edge chipping: <1μm vs 5–15μm
Thermal impact: <5μm vs mechanical stress + high temperature
Yield: 99.5%+ vs 85%-92%
Efficiency: ↑30%–100%
Laser welding vs soldering / brazing
Thermal impact: <0.2mm vs 2–5mm
Accuracy: ±1μm vs ±50μm
Dissimilar materials: copper / aluminum / ceramic weldable vs difficult
Yield: 99.7%+ vs 95%-98%
Automation: easy to integrate vs difficult
IV. Selection Suggestions (By Process)
Cutting selection
Ultra-thin silicon (<50μm): UV invisible cutting
SiC/GaN: UV femtosecond grooving + invisible cutting
Ordinary silicon (≥100μm): Green laser / Fiber laser cutting
Welding selection
Fine pitch packaging: UV laser solder ball bonding
Power module (copper): Blue laser welding
Airtight sealing cover: Pulsed fiber laser seam welding
V. Risk control and yield assurance
Environment: Constant temperature (±0.5℃), dust-free (Class 1000), shock-resistant
Process: AI parameter library + real-time monitoring + closed-loop feedback
Optics: Regularly calibrate the optical path, clean the lenses, and stabilize the power
Inspection: AI vision automatically inspects for chipping, cracks, and soldering defects
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